Prof. Jinhui Song H-index: 44 Dalian University of Technology, China |
Biography: Prof. Jinhui Song received his B.S. degree from Department of Physics at Nankai University, China in 1998; his M.S. degree in School of Physics at Georgia Institute of Technology, U.S. in 2003; and his Ph.D. degree in School of Materials Science and Engineering from Georgia Institute of Technology, U.S. in 2008. He carried out his Post-Doctoral Fellowship in Georgia Institute of Technology from 2008-2011. Then, Prof. Song worked as a tenure track assistant professor in Department of Metallurgical and Materials Engineering, the University of Alabama, U.S. from 2011-2015. Starting from 2016, Prof. Song joined School of Mechanical Engineering, Dalian University of Technology, China as professor and the director of Institute of Vibration and Sensor Engineering. Prof. Song’s research interests include studying mechanical, electrical, piezoelectrical, photoelectrical properties of nanomaterials; and fabricating piezoelectrical nanogenerators, energy cell, photoelectric nanosensors and other nanodevices. Till to Aug. 2024, Prof. Song has authored or co-authored more than 110 journal articles, 5 US patents, and 10+ China Patens. |
Speech Title: Exploring the application of photoelectric nanoscience and nanotechnology Abstract: Due to the quantum effects caused by nanoscale confinement, the fundamental properties of nanoscale materials exhibit peculiar characteristics that are completely different from macroscopic bulk materials. With the development of semiconductor electronics, present integrated circuits is in the nanoscale. Systematically studying the fundamental properties of semiconductor nanostructures and exploring new devices based on nanostructures will greatly enhance the basic understanding of nanomaterials, while also vigorously promoting the development of semiconductor optoelectronic technology. Based on fundamental scientific research and guided by major applications, our research group has systematically characterized the performance of typical semiconductor nanostructures and explored their applications in various fields such as optoelectronic sensing, luminescence, and medical engineering integration. |
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Prof. Weigang Hou H-index: 21 Excellent youth fund of NSF Chongqing University of Posts and Telecommunications, China |
Biography: Weigang Hou was born in China in 1984. He received the Master of Engineering degree in communication and information system from Northeastern University, Shenyang, China in 2009, and the Ph.D. degree from the same university in 2014. In 2011, he won Chinese Academic newcomer award. In 2012, he was an associate researcher with the computer science from City University of Hong Kong. From 2013 to 2018, he was an associate professor with the school of computer science and engineering in Northeastern University, Shenyang, China. From 2019, he was the full professor, Ph. D supervisor and co-tutor of Postdoctoral/workstation in Chongqing University of Posts and Telecommunications. He is also the member of IEEE ComSoc and OSA, review editor on the Editorial Board of Optical Communications and Networks (specialty section of Frontiers in Communications and Networks), and Young academic editor of international journal DCN. In 2019, he won the award of top-notch young talent in Chongqing Talent Program. In 2022, he won the National Funding of Excellent Youth Project. His interests are in the area of optical network on chip with new materials. His research programs span the interest areas above. Until now, he has served as the session chair, program vice-chair and program chair of IEEE international conferences such as Globecom, and the reviewer for a number of IEEE journals, including IEEE Journal of Lightwave Technology (JLT), IEEE Journal of Optical Communications and Networking (JOCN), and IEEE Communication Magazine (ComMag), etc. He has held over 120 publications, and they span IEEE Magazine, Trans, Journals and some famous conferences, including IEEE ComMag, IEEE Netw, IEEE JLT, IEEE JOCN, OFC, Globecom and ICC, etc. He also has been an Invited Speaker at about 20 IEEE conferences. Since 2013, he has won a number of international scientific honors and awards, including the candidate of the best researcher award at the world top scientist awards, the best paper during 2018 from IEEE Systems Journal, the best paper award of IEEE conferences CITS and Qshine, the post-deadline paper of IEEE conference ICOCN, the outstanding reviewer of 3 international journals, and 8 highly-cited paper, etc. |
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Prof. Huolin Huang IEEE Senior Member Dalian University of Technology, China |
Biography: Huang Huolin is currently a professor and doctoral supervisor at the School of Optoelectronic Engineering and Instrument Science, Dalian University of Technology. He has been selected into the local high-level talent program and serves as the director of the Provincial Third-Generation Semiconductor Technology Innovation Center and the leader of the Dalian University of Technology's Gallium Nitride (GaN) Electronic Devices Innovation Team. He has worked for many years in the Department of Electrical Engineering at the National University of Singapore and has successfully developed high-threshold-voltage 600–2000V high-voltage normally-off (enhancement-mode) GaN power devices, with comprehensive performance reaching the international advanced level of the same period. He currently leads a team (comprising 8 faculty members and over 50 master's and doctoral students) focusing on the design and process of high-reliability full-voltage GaN power switch devices, integration of perception and detection based on GaN devices, and instrument manufacturing technology. His representative academic achievements include winning the Innovation Award from the China Association of Inventors, the Second Prize in Science and Technology Award from the China Recycling Economy Association, the First Prize in Technical Invention from Dalian City, and the First Prize in Academic Achievement Award from Dalian University of Technology (ranked first). He has published over 80 academic papers in renowned journals and important international conferences in the field, such as IEEE Electron Device Letters and IEEE Transactions on Power Electronics. He has also initiated and formulated three industry standards for GaN device technology and applied for or obtained more than 50 US and domestic invention patents. In the past five years, he has led more than 30 projects or topics, including key R&D projects from the Ministry of Science and Technology and key/general projects from the National Natural Science Foundation. His social positions include IEEE Senior Member, member of the Standardization Committee of the National Third-Generation Semiconductor Alliance, and reviewer for major/ key/ general/ joint funds from the National Natural Science Foundation, as well as science and technology projects and talent programs from the Ministry of Education and multiple provincial governments. |